schottky barrier diode z applications low current rectification z features extremelysmall surface mounting type. (sod882) low high reliability. z construction silicon epitaxial planar 1 2 cathode anode device marking and ordering information device marking shipping 10000/tape&reel leshan radio company , ltd. we declare that the material of product compliance with rohs requirements. z a bsolute maximum ratings (ta=25 c) sy mbol unit v rm v z electrical ch aracteristic (ta=25 c) v 30 reverse voltage (dc) r v io ma i fsm ma tj ts tg orward current surge peak 60hz ? 1cyc 200 125 -40 to +125 limits 30 40 parameter ard current f junction temperature storage temperature average rectified forw reverse voltage (repetitive peak) sy mbol min. typ. max. unit v f -0 . 3 7 v i f =1 ma i r -0 . 5 a v r = 30v ct - 2 - pf v r =1v , f=1mhz conditions reverse current parameter o rward voltage capacitance between terminals f v f rev.a 1/3 sod882 1 2 5000/tape&reel 8000/tape&reel s-lrb751bs-40t5g lrb751bs-40t5g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. lrb751bs-40t1g 5 s-lrb751bs-40t1g lrb751bs-40t3g 5 s-lrb751bs-40t3g lrb751bs-40t5g 5 s-lrb751bs-40t5g
leshan radio company , ltd. z electrical ch aracteristic curves f orward voltagevf(mv) vf-if characteristics fo rward current:if(ma) 0reverse current:ir(na) rev erse voltagevr(v) vr-ir characteristics c apacitance between terminals:ct(pf) r everse voltage:vr(v) vr-ct characteristics 0. 001 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 800 t a=-25 t a=125 t a=75 t a=25 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 t a=125 t a=75 t a=25 t a=-25 0. 1 1 10 0 5 10 15 20 25 30 f =1mhz rev.a 2/3 lrb751bs-40t5g , s-lrb751bs-40t5g
leshan radio company , ltd. rev.a 3/3 sod882 lrb751bs-40t5g , s-lrb751bs-40t5g unit:mm dimension outline:
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